ELECTRONIC PROPERTIES OF MODEL AMORPHOUS-SEMICONDUCTOR STRUCTURES

被引：13

作者：

BULLETT, DW

KELLY, MJ

机构：

[1] Cavendish Laboratory, Cambridge

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1979年 / 32卷 / 1-3期

关键词：

D O I：

10.1016/0022-3093(79)90074-7

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Photoemission spectra and electrinic structure calculations on network models together provide at least as fine a caliper on topological statistics as the more direct probes of the structure of amorphous semiconductors. With special reference to silicon, arsenic and selenium, we summarize recent developments in the calculation of electronic densities of states of disordered covalent networks, and consider the role of such studies in the investigation of the electronic properties of amorphous materials. © 1979.

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页码：225 / 239

页数：15

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