Bound excitons in the narrow-gap semiconductor InSb

被引：7

作者：

Seiler, DG ^{[1
]}

Littler, KH

Littler, CL

机构：

[1] N Texas State Univ, Dept Phys, Ctr Appl Quantum Elect, Denton, TX 76203 USA

[2] Texas Instruments Inc, Cent Res Labs, Dallas, TX 75266 USA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1986年 / 1卷 / 06期

关键词：

D O I：

10.1088/0268-1242/1/6/007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Magneto-absorption studies of n-lnSb using a CO laser and sensitive photoconductive techniques provide evidence for the presence of excitons bound to neutral acceptors. Additional structure observed arises from free-exciton and neutral impurity-to-band transitions.

引用

页码：383 / 386

页数：4

共 22 条

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