1ST OBSERVATION OF PARAMAGNETIC NITROGEN DANGLING-BOND CENTERS IN SILICON-NITRIDE

We report the first definitive identification of nitrogen dangling bonds in silicon nitride. A computer analysis of N14 hyperfine parameters shows that the unpaired electron is strongly localized on the central nitrogen atom and that the unpaired electrones wave function is almost entirely p in character. This is only the second fundamental intrinsic electron-paramagnetic-resonance center to be identified in silicon nitride. © 1990 The American Physical Society.