ABSOLUTE MEASUREMENT OF THE PHOTOPEAK EFFICIENCY FOR A SI(LI) DETECTOR - 0.52-8.04 KEV

We have measured the absolute photpeak efficiency of a Si(Li) semiconductor detector by a new technique. Proton- and helium-ion bombardments of 18 target materials (8≤Z2≤29) were used to produce X-rays at photon energies spanning the range 0.52-8.04 keV. The scattered projectile (1H, 4He) yields into known solid angles at 160° were measured simultaneously with the X-ray data. The detector efficiency was deduced with the help of the recent theoretical K-ionization cross section results of Basbas et al. Our results are in good agreement with a calculated efficiency curve, and also with a measurement using a thin 57Co source. Elastic scattering cross sections have also been measured for protons on a few elements (Mg, Al, Si, Ca, Ni) at 0.5 and 1.0 MeV. © 1979.