RELIABILITY ISSUES OF FLASH MEMORY CELLS

被引：142

作者：

ARITOME, S ^{[1
]}

SHIROTA, R ^{[1
]}

HEMINK, G ^{[1
]}

ENDOH, T ^{[1
]}

MASUOKA, F ^{[1
]}

机构：

[1] TOSHIBA CO LTD,CTR RES & DEV,DEVICE RES DEPT,KAWASAKI 210,JAPAN

来源：

PROCEEDINGS OF THE IEEE | 1993年 / 81卷 / 05期

关键词：

D O I：

10.1109/5.220908

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The reliability issues of Flash electrically erasable programmable read-only memory (Flash EEPROM) are reviewed in this paper. The reduction of the memory cell size and improvement in the reliability have been realized by several breakthroughs in the device technology; in particular, the reliability of the ETOX and NAND structure EEPROM will be discussed in detail. Flash EEPROM is expected to be a very promising device for a large nonvolatile memory market. One of the most promising applications is the replacement of the conventional magnetic hard disk by nonvolatile memories.

引用

页码：776 / 788

页数：13

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