CDS THIN-FILMS - SPEED OF RESPONSE CHARACTERISTICS

被引:3
作者
BHAR, TN
LINDER, JS
机构
[1] HOWARD UNIV,DEPT ELECT ENGN,WASHINGTON,DC 20001
[2] TEXAS A&M UNIV,DEPT ELECT ENGN,COLLEGE STN,TX 77843
关键词
D O I
10.1016/0040-6090(74)90113-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:267 / 272
页数:6
相关论文
共 8 条
[1]   PHOSPHOROUS-ION-IMPLANTED CDS [J].
ANDERSON, WW ;
MITCHELL, JT .
APPLIED PHYSICS LETTERS, 1968, 12 (10) :334-&
[2]  
BHAR TN, 1973, SW I ELECTRICAL ELEC, P659
[3]   ION IMPLANTATION DOPING OF ZINC SULPHIDE THIN FILMS [J].
BROWN, MR ;
COX, AFJ ;
SHAND, WA ;
WILLIAMS, JM .
SOLID STATE COMMUNICATIONS, 1971, 9 (01) :37-&
[4]   HIGH CONDUCTIVITY P-TYPE CDS [J].
CHERNOW, F ;
ELDRIDGE, G ;
RUSE, G ;
WAHLIN, L .
APPLIED PHYSICS LETTERS, 1968, 12 (10) :339-&
[5]  
GERRITSEN HJ, 1957, HELV PHYS ACTA, V30, P504
[6]  
Rose A., 1951, RCA REV, V12, P362
[7]  
SAKAI Y, 1964, JPN J APPL PHYS, V3, P144
[8]  
TELL B, 1971, J APPL PHYS, V40, P5320