ION IMPLANTATION DOPING OF ZINC SULPHIDE THIN FILMS

[1] PHOSPHOROUS-ION-IMPLANTED CDS [J]. APPLIED PHYSICS LETTERS, 1968, 12 (10) : 334 - &

[2] TB3+ AS RECOMBINATION CENTER IN ZNS [J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 136 (2A): : A556 - &

[3] ANDERSON WW, 1967, T MET SOC AIME, V239, P350

[4] HIGH CONDUCTIVITY P-TYPE CDS [J]. APPLIED PHYSICS LETTERS, 1968, 12 (10) : 339 - &

[5] GARLICK GFJ, 1966, LUMINESCENCE INORGAN, P687

[6] DOPING OF SEMICONDUCTORS BY ION BOMBARDMENT [J]. NUCLEAR INSTRUMENTS & METHODS, 1965, 38 (DEC): : 165 - &

[7] HILL J, SRDE69049 REP

[8] LUMINESCENCE FROM ERBIUM-ACTIVATED GROUP 2-6 COMPOUNDS CONTAINING ALKALI METAL COMPENSATORS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (04) : 471 - &

[9] Nelson R. S., 1968, OBSERVATION ATOMIC C

[1] PHOSPHOROUS-ION-IMPLANTED CDS [J]. APPLIED PHYSICS LETTERS, 1968, 12 (10) : 334 - &

[2] TB3+ AS RECOMBINATION CENTER IN ZNS [J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 136 (2A): : A556 - &

[3] ANDERSON WW, 1967, T MET SOC AIME, V239, P350

[4] HIGH CONDUCTIVITY P-TYPE CDS [J]. APPLIED PHYSICS LETTERS, 1968, 12 (10) : 339 - &

[5] GARLICK GFJ, 1966, LUMINESCENCE INORGAN, P687

[6] DOPING OF SEMICONDUCTORS BY ION BOMBARDMENT [J]. NUCLEAR INSTRUMENTS & METHODS, 1965, 38 (DEC): : 165 - &

[7] HILL J, SRDE69049 REP

[8] LUMINESCENCE FROM ERBIUM-ACTIVATED GROUP 2-6 COMPOUNDS CONTAINING ALKALI METAL COMPENSATORS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (04) : 471 - &

[9] Nelson R. S., 1968, OBSERVATION ATOMIC C