A DYNAMIC THRESHOLD VOLTAGE MOSFET (DTMOS) FOR VERY-LOW VOLTAGE OPERATION

被引：76

作者：

ASSADERAGHI, F

PARKE, S

SINITSKY, D

BOKOR, J

KO, PK

HU, CM

机构：

[1] Department of Electrical Engineering and Computer Science, University of California at Berkeley, Berkeley

[2] Department of Electrical Engineering and Computer Science, University of California at Berkeley, East Fishkill, NY

来源：

IEEE ELECTRON DEVICE LETTERS | 1994年 / 15卷 / 12期

关键词：

D O I：

10.1109/55.338420

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new mode of operation for Silicon-On-Insulator (SOI) MOSFET is experimentally investigated. This mode gives rise to a Dynamic Threshold voltage MOSFET (DTMOS). DTMOS threshold voltage drops as gate voltage is raised, resulting in a much higher current drive than regular MOSFET at low V-dd. On the other hand, V-t is high at V-gs = 0, thus the leakage current is low. Suitability of this device for ultra low voltage operation is demonstrated by ring oscillator performance down to V-dd = 0.5 V.

引用

页码：510 / 512

页数：3