AN SOI VOLTAGE-CONTROLLED BIPOLAR-MOS DEVICE

被引：72

作者：

COLINGE, JP

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 04期

关键词：

D O I：

10.1109/T-ED.1987.23005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：845 / 849

页数：5

共 10 条

[1]

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COLINGE, JP ;

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PENG, S .

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[3] HIGH-SPEED, LOW-POWER, IMPLANTED-BURIED-OXIDE CMOS CIRCUITS [J].

COLINGE, JP ;

HASHIMOTO, K ;

KAMINS, T ;

CHIANG, SY ;

LIU, ED ;

PENG, SS ;

RISSMAN, P .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (05) :279-281

[4]

COLINGE JP, 1986, ELECTRON LETT, V22, P896

[5] EFFECT OF A FLOATING SUBSTRATE ON OPERATION OF SILICON-ON-SAPPHIRE TRANSISTORS [J].

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LALEVIC, B .

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[6]

Hatano H., 1981, International Electron Devices Meeting, P359

[7]

KATO K, 1985, 2ND INT WORKSH FUT E, P123

[8]

MULLER RS, 1986, DEVICE ELECT INTEGRA, P335

[9]

PINTO MR, 1984, PISCES 2 POISSON CON

[10] FULLY ISOLATED LATERAL BIPOLAR-MOS TRANSISTORS FABRICATED IN ZONE-MELTING-RECRYSTALLIZED SI FILMS ON SIO2 [J].

TSAUR, BY ;

SILVERSMITH, DJ ;

FAN, JCC ;

MOUNTAIN, RW .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (08) :269-271

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