FABRICATION OF THIN SILICON-ON-INSULATOR FILMS USING LASER RECRYSTALLIZATION

[1] AKASAKA Y, 1983, MAU VLSI S VLSI TECH, P48

[2] GROWTH OF LARGE AREAS OF GRAIN BOUNDARY-FREE SILICON-ON-INSULATOR [J]. ELECTRONICS LETTERS, 1983, 19 (23) : 985 - 986

[3] Drowley C. I., 1984, Energy Beam-Solid Interactions and Transient Thermal Processing Symposium, P465

[4] KATO K, 1984, SDD8438 I EL COMM EN, P1

[5] EFFECT OF SEMICONDUCTOR THICKNESS ON CAPACITANCE-VOLTAGE CHARACTERISTICS OF AN MOS CAPACITOR [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (12): : 1659 - 1660

[6] NISHIMURA T, 1985, 2ND P INT WORKSH FUT, P19

[7] SEKIGAWA T, 1984, SOLID STATE ELECTRON, V28, P828

[8] OPTICAL WAVE-GUIDE DETECTION - PHOTODETECTOR ARRAY FORMED ON THE WAVE-GUIDE UTILIZING LASER RECRYSTALLIZED SILICON [J]. APPLIED PHYSICS LETTERS, 1985, 46 (05) : 498 - 500

[1] AKASAKA Y, 1983, MAU VLSI S VLSI TECH, P48

[2] GROWTH OF LARGE AREAS OF GRAIN BOUNDARY-FREE SILICON-ON-INSULATOR [J]. ELECTRONICS LETTERS, 1983, 19 (23) : 985 - 986

[3] Drowley C. I., 1984, Energy Beam-Solid Interactions and Transient Thermal Processing Symposium, P465

[4] KATO K, 1984, SDD8438 I EL COMM EN, P1

[5] EFFECT OF SEMICONDUCTOR THICKNESS ON CAPACITANCE-VOLTAGE CHARACTERISTICS OF AN MOS CAPACITOR [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (12): : 1659 - 1660

[6] NISHIMURA T, 1985, 2ND P INT WORKSH FUT, P19

[7] SEKIGAWA T, 1984, SOLID STATE ELECTRON, V28, P828

[8] OPTICAL WAVE-GUIDE DETECTION - PHOTODETECTOR ARRAY FORMED ON THE WAVE-GUIDE UTILIZING LASER RECRYSTALLIZED SILICON [J]. APPLIED PHYSICS LETTERS, 1985, 46 (05) : 498 - 500