FULLY ISOLATED LATERAL BIPOLAR-MOS TRANSISTORS FABRICATED IN ZONE-MELTING-RECRYSTALLIZED SI FILMS ON SIO2

被引：15

作者：

TSAUR, BY

SILVERSMITH, DJ

FAN, JCC

MOUNTAIN, RW

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1983年 / 4卷 / 08期

关键词：

D O I：

10.1109/EDL.1983.25729

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：269 / 271

页数：3

共 14 条

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[3] ZONE-MELTING RECRYSTALLIZATION OF SI FILMS WITH A MOVEABLE-STRIP-HEATER OVEN [J].

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TSAUR, BY ;

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[4]

GROVE AS, 1967, PHYS TECHNOL S, pCH7

[5]

IPRI AC, 1977, Patent No. 4050965

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[7] LATERAL COMPLEMENTARY TRANSISTOR STRUCTURE FOR SIMULTANEOUS FABRICATION OF FUNCTIONAL BLOCKS [J].

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CHANG, GY .

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[8] EFFECTS OF GRAIN-BOUNDARIES ON LASER CRYSTALLIZED POLY-SI MOSFETS [J].

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ELECTRON DEVICE LETTERS, 1981, 2 (12) :316-318

[9]

Ogura S., 1981, International Electron Devices Meeting, P651

[10] SOI CMOS CIRCUITS FABRICATED IN ZONE-MELTING-RECRYSTALLIZED SI FILMS ON SIO2-COATED SI SUBSTRATES [J].

TSAUR, BY ;

FAN, JCC ;

CHAPMAN, RL ;

GEIS, MW ;

SILVERSMITH, DJ ;

MOUNTAIN, RW .

ELECTRON DEVICE LETTERS, 1982, 3 (12) :398-401

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