SOI CMOS CIRCUITS FABRICATED IN ZONE-MELTING-RECRYSTALLIZED SI FILMS ON SIO2-COATED SI SUBSTRATES

[1] ZONE-MELTING RECRYSTALLIZATION OF 3-IN-DIAM SI FILMS ON SIO2-COATED SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1982, 41 (02) : 186 - 188

[2] ZONE-MELTING RECRYSTALLIZATION OF ENCAPSULATED SILICON FILMS ON SIO2 - MORPHOLOGY AND CRYSTALLOGRAPHY [J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 158 - 160

[3] MOSFETS ON SILICON PREPARED BY MOVING MELT ZONE RECRYSTALLIZATION OF ENCAPSULATED POLYCRYSTALLINE SILICON ON AN INSULATING SUBSTRATE [J]. ELECTRON DEVICE LETTERS, 1981, 2 (10): : 241 - 243

[4] Tsaur B.-Y., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P585

[5] IMPROVED TECHNIQUES FOR GROWTH OF LARGE-AREA SINGLE-CRYSTAL SI SHEETS OVER SIO2 USING LATERAL EPITAXY BY SEEDED SOLIDIFICATION [J]. APPLIED PHYSICS LETTERS, 1981, 39 (07) : 561 - 563

[6] N-CHANNEL DEEP-DEPLETION METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS FABRICATED IN ZONE-MELTING-RECRYSTALLIZED POLYCRYSTALLINE SI FILMS ON SIO2 [J]. APPLIED PHYSICS LETTERS, 1981, 39 (11) : 909 - 911

[7] TSAUR BY, 1982, ELECTRONIC MATERIAL

[1] ZONE-MELTING RECRYSTALLIZATION OF 3-IN-DIAM SI FILMS ON SIO2-COATED SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1982, 41 (02) : 186 - 188

[2] ZONE-MELTING RECRYSTALLIZATION OF ENCAPSULATED SILICON FILMS ON SIO2 - MORPHOLOGY AND CRYSTALLOGRAPHY [J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 158 - 160

[3] MOSFETS ON SILICON PREPARED BY MOVING MELT ZONE RECRYSTALLIZATION OF ENCAPSULATED POLYCRYSTALLINE SILICON ON AN INSULATING SUBSTRATE [J]. ELECTRON DEVICE LETTERS, 1981, 2 (10): : 241 - 243

[4] Tsaur B.-Y., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P585

[5] IMPROVED TECHNIQUES FOR GROWTH OF LARGE-AREA SINGLE-CRYSTAL SI SHEETS OVER SIO2 USING LATERAL EPITAXY BY SEEDED SOLIDIFICATION [J]. APPLIED PHYSICS LETTERS, 1981, 39 (07) : 561 - 563

[6] N-CHANNEL DEEP-DEPLETION METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS FABRICATED IN ZONE-MELTING-RECRYSTALLIZED POLYCRYSTALLINE SI FILMS ON SIO2 [J]. APPLIED PHYSICS LETTERS, 1981, 39 (11) : 909 - 911

[7] TSAUR BY, 1982, ELECTRONIC MATERIAL