ISLAND-EDGE EFFECTS IN C-MOS-SOS TRANSISTORS

被引：25

作者：

LEE, SN

KJAR, RA

KINOSHITA, G

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 08期

关键词：

D O I：

10.1109/T-ED.1978.19209

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：971 / 978

页数：8

共 13 条

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