THERMAL REDISTRIBUTION OF IMPURITIES IN SILICON-ON-SAPPHIRE - THEORETICAL DEVELOPMENT

被引：5

作者：

MALDONADO, CD ^{[1
]}

MANDEL, G ^{[1
]}

KINOSHITA, G ^{[1
]}

机构：

[1] ROCKWELL INT CORP,ANAHEIM,CA 92803

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 06期

关键词：

D O I：

10.1063/1.323017

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2269 / 2276

页数：8

共 12 条

[1]

FRIEDMAN B, 1956, PRINCIPLES TECHNIQUE, pCH3

[2] REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON [J].

GROVE, AS ;

SAH, CT ;

LEISTIKO, O .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) :2695-&

[3]

GUNCKEL H, 1975, SOLID STATE ELECTRON, V18, P99

[4] ON REDISTRIBUTION OF BORON IN DIFFUSED LAYER DURING THERMAL OXIDATION [J].

HUANG, JST ;

WELLIVER, LC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (12) :1577-&

[5]

IRENE EA, 1975, ELECTROCHEMICAL SOC

[6]

KATO T, 1964, JPN J APPL PHYS, V3, P377

[7] THIN SILICON FILM ON INSULATING SUBSTRATE [J].

KUHN, GL ;

RHEE, CJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) :1563-1566

[8]

Mayer J. W., 1970, ION IMPLANTATION SEM

[9]

MORSE PM, 1953, METHODS THEORETICAL, V1, pCH7

[10] DIFFUSION OF BORON FROM IMPLANTED SOURCES UNDER OXIDIZING CONDITIONS [J].

PRINCE, JL ;

SCHWETTMANN, FN .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (05) :705-710

← 1 2 →