THIN SILICON FILM ON INSULATING SUBSTRATE

被引：10

作者：

KUHN, GL ^{[1
]}

RHEE, CJ ^{[1
]}

机构：

[1] MOTOROLA INC, SEMICOND RES & DEV LABS, SEMICOND PROD DIV, PHOENIX, AZ 85008 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1973年 / 120卷 / 11期

关键词：

D O I：

10.1149/1.2403303

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1563 / 1566

页数：4

共 9 条

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ROBINSON, PH .

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[2] PREPARATION OF THIN SILICON CRYSTALS BY ELECTROCHEMICAL THINNING OF EPITAXIALLY GROWN STRUCTURES [J].

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JONGE, JD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (04) :553-&

[3] NEW DIELECTRIC ISOLATION TECHNIQUE FOR BIPOLAR INTEGRATED-CIRCUITS USING THIN SINGLE-CRYSTAL SILICON FILMS [J].

KAMINS, TI .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (07) :915-+

[4]

PRICE JB, 1972, FAL M MIAM BEACH FLO

[5]

ROBINSON P, 1958, J ELECTROCHEM SOC, V115, P75

[6]

SUMITOMO Y, 1972, SPR M EL SOC HOUST, P74

[7]

THEMSSEN MJJ, 1970, J ELECTROCHEM SOC, V117, P959

[8] PREFERENTIAL ELECTROCHEMICAL ETCHING OF P+ SILICON IN AN AQUEOUS HF-H2SO4 ELECTROLYTE [J].

WEN, CP ;

WELLER, KP .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (04) :547-+

[9]

3721588

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