CARRIER MULTIPLICATION IN PINCHOFF REGION OF MOS TRANSISTORS

[1] MAXIMUM DRIFT VELOCITY OF MOS-FIELD-EFFECT TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 789 - +

[2] BAUM G, 1970, IEEE T, VED 7, P481

[3] IONIZATION RATES FOR ELECTRONS AND HOLES IN SILICON [J]. PHYSICAL REVIEW, 1958, 109 (05): : 1537 - 1540

[4] GROVE AS, 1967, PHYSICS TECHNOLOGY S, P325

[5] LETURCQ P, 1969, THESIS FS TOULOUSE

[6] MERKEL G, 1970, COLLOQUIUM INT MICRO, V1, P138

[7] CHARGE MULTIPLICATION IN SILICON P-N JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1963, 6 (02) : 147 - 157

[8] MORETTI G, 1964, FUNCTIONS COMPLEX VA, P151

[9] ANOMALOUS ENHANCEMENT OF SUBSTRATE TERMINAL CURRENT BEYOND PINCH-OFF IN SILICON N-CHANNEL MOS TRANSISTORS AND ITS RELATED PHENOMENA [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (11): : 2088 - &

[10] INFLUENCE ON CHARACTERISTICS OF MOS TRANSISTORS OF MOBILITY REDUCTION DUE TO A TRANSVERSE ELECTRIC FIELD [J]. ELECTRONICS LETTERS, 1969, 5 (23) : 604 - &

[1] MAXIMUM DRIFT VELOCITY OF MOS-FIELD-EFFECT TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 789 - +

[2] BAUM G, 1970, IEEE T, VED 7, P481

[3] IONIZATION RATES FOR ELECTRONS AND HOLES IN SILICON [J]. PHYSICAL REVIEW, 1958, 109 (05): : 1537 - 1540

[4] GROVE AS, 1967, PHYSICS TECHNOLOGY S, P325

[5] LETURCQ P, 1969, THESIS FS TOULOUSE

[6] MERKEL G, 1970, COLLOQUIUM INT MICRO, V1, P138

[7] CHARGE MULTIPLICATION IN SILICON P-N JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1963, 6 (02) : 147 - 157

[8] MORETTI G, 1964, FUNCTIONS COMPLEX VA, P151

[9] ANOMALOUS ENHANCEMENT OF SUBSTRATE TERMINAL CURRENT BEYOND PINCH-OFF IN SILICON N-CHANNEL MOS TRANSISTORS AND ITS RELATED PHENOMENA [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (11): : 2088 - &

[10] INFLUENCE ON CHARACTERISTICS OF MOS TRANSISTORS OF MOBILITY REDUCTION DUE TO A TRANSVERSE ELECTRIC FIELD [J]. ELECTRONICS LETTERS, 1969, 5 (23) : 604 - &