EFFECT OF CARBON CONCENTRATION ON THE ELECTRICAL-PROPERTIES OF LIQUID-ENCAPSULATED CZOCHRALSKI SEMIINSULATING GAAS

被引：9

作者：

CHICHIBU, S ^{[1
]}

MATSUMOTO, S ^{[1
]}

OBOKATA, T ^{[1
]}

机构：

[1] OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 10期

关键词：

D O I：

10.1063/1.339835

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4316 / 4318

页数：3

共 9 条

[1] CARBON, OXYGEN AND SILICON IMPURITIES IN GALLIUM-ARSENIDE [J].

BROZEL, MR ;

CLEGG, JB ;

NEWMAN, RC .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1978, 11 (09) :1331-1339

[2] CORRELATION OF THRESHOLD VOLTAGE OF IMPLANTED FIELD-EFFECT TRANSISTORS AND CARBON IN GAAS SUBSTRATES [J].

CHEN, RT ;

HOLMES, DE ;

ASBECK, PM .

APPLIED PHYSICS LETTERS, 1984, 45 (04) :459-461

[3]

Holmes D. E., 1982, IEEE T ELECTRON DEV, V29, P1045

[4] QUANTITATIVE-ANALYSIS OF CARBON IN LIQUID-ENCAPSULATED CZOCHRALSKI GAAS [J].

HOMMA, Y ;

ISHII, Y ;

KOBAYASHI, T ;

OSAKA, J .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) :2931-2935

[5]

KIKUTA T, 1984, 16TH INT C SOL STAT, P173

[6] COMPENSATION MECHANISMS IN GAAS [J].

MARTIN, GM ;

FARGES, JP ;

JACOB, G ;

HALLAIS, JP ;

POIBLAUD, G .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2840-2852

[7] TECHNIQUE FOR PULLING SINGLE CRYSTALS OF VOLATILE MATERIALS [J].

METZ, EPA ;

MAZELSKY, R ;

MILLER, RC .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (06) :2016-+

[8]

SMITH RA, 1964, SEMICONDUCTORS, P100

[9]

THESIS WM, 1982, APPL PHYS LETT, V41, P70

← 1 →