CREATION OF DEFECTS DURING GROWTH OF SEMICONDUCTOR SINGLE-CRYSTALS AND FILMS

被引:35
作者
MILVIDSKII, MG
BOCHKAREV, EP
机构
关键词
D O I
10.1016/0022-0248(78)90329-9
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
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页码:61 / 74
页数:14
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共 44 条
[11]  
DOLGINOV LM, 1976, KVANTOVAYA ELEKTRON+, V3, P1381, DOI 10.1070/QE1976v006n07ABEH011645
[12]  
DOLGINOV LM, 1976, KVANTOVAYA ELEKTRON+, V3, P465
[13]  
DOLGINOV LM, 1974, PHYSICAL PROCESSES H, P62
[14]  
DOLGINOV LM, 1975, FIZ TEKH POLUPROV, V9, P1319
[15]  
DOLGINOV LM, 1975, 4 REP THES ALL UN C, P159
[16]  
DOLGINOV LM, 1976, KRATK SOOBSHCH FIZ, V8, P29
[17]  
Druzhinina L. V., 1974, ZH TEKH FIZ, V44, P1503
[18]   HIGH-QUANTUM-EFFICIENCY PHOTOEMISSION FROM AN INGAASP PHOTOCATHODE [J].
ESCHER, JS ;
ANTYPAS, GA ;
EDGECUMBE, J .
APPLIED PHYSICS LETTERS, 1976, 29 (03) :153-155
[19]  
FOMIN VG, 1964, KRISTALLOGRAFIYA, V9, P219
[20]  
GOVORKOV AV, 1977, KRISTALLOGRAFIYA+, V22, P1060