EFFECT OF INHOMOGENEOUS BONDING ON OUTPUT OF INJECTION-LASERS

被引:8
作者
LYNCH, RT
机构
关键词
D O I
10.1063/1.91585
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:505 / 506
页数:2
相关论文
共 11 条
[1]   TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR DOUBLE-HETEROJUNCTION LASERS [J].
ETTENBERG, M ;
NUESE, CJ ;
KRESSEL, H .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (04) :2949-2950
[2]   THERMAL RESISTANCE OF HETEROSTRUCTURE LASERS [J].
JOYCE, WB ;
DIXON, RW .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (02) :855-862
[3]   3 DIMENSIONAL THERMAL PROBLEMS OF DOUBLE-HETEROSTRUCTURE SEMICONDUCTOR-LASERS [J].
KOBAYASHI, T ;
IWANE, G .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (08) :1403-1408
[4]   OPTICAL-ABSORPTION AT DARK LINES IN DEGRADED DOUBLE-HETEROSTRUCTURE LASERS [J].
KOBAYASHI, T ;
SEKI, Y ;
FURUKAWA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (04) :516-520
[5]  
KRESSEL H, 1977, SEMICONDUCTOR LASERS, P107
[6]   THERMAL PERFORMANCE AND LIMITATIONS OF SILICON-SUBSTRATE PACKAGED GAAS LASER ARRAYS [J].
LAFF, RA ;
COMERFORD, LD ;
CROW, JD ;
BRADY, MJ .
APPLIED OPTICS, 1978, 17 (05) :778-784
[7]   THERMAL-GRADIENT ENHANCED CURRENT SPREADING IN DH LASERS [J].
LYNCH, RT ;
YANG, L ;
HUNG, RY .
ELECTRONICS LETTERS, 1978, 14 (24) :769-770
[8]   TEMPERATURE DEPENDENCE OF EMISSION EFFICIENCY AND LASING THRESHOLD IN LASER DIODES [J].
PANKOVE, JI .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1968, QE 4 (04) :119-&
[9]   NEW TECHNIQUE FOR MEASURING THERMAL IMPEDANCE OF JUNCTION LASERS [J].
PAOLI, TL .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) :498-503
[10]   GAIN-CURRENT RELATION FOR GAAS LASERS WITH N-TYPE AND UNDOPED ACTIVE LAYERS [J].
STERN, F .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (02) :290-294