TANTALUM OXIDE-FILMS FORMED BY UV PHOTO-CVD USING OZONE AND TACL5

被引：21

作者：

TANIMOTO, S

MATSUI, M

AOYAGI, M

KAMISAKO, K

KUROIWA, K

TARUI, Y

机构：

[1] Department of Electronic Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo, 184

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 3A期

关键词：

TANTALUM OXIDE; PHOTO-CVD; ULTRAVIOLET; OZONE; LEAKAGE CURRENT;

D O I：

10.1143/JJAP.30.L330

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new UV photo-CVD is developed to fabricate thin films of high-dielectric-constant Ta2O5. The significant features of the new photo-CVD are the UV 254 nm irradiation and the use of pure O3 as an oxidant source. The as-grown films obtained at a low deposition temperature of 300-degrees-C show very low leakage current and remarkably good step coverage. UV irradiation during CVD is essential to improve the resistivity and dielectric breakdown strength of the film. This CVD method and understanding of the related mechanism may be applicable to fabrication technology of future VLSI's.

引用

页码：L330 / L333

页数：4

共 9 条

[1] EFFECT OF OZONE ANNEALING ON THE DIELECTRIC-PROPERTIES OF TANTALUM OXIDE THIN-FILMS GROWN BY CHEMICAL VAPOR-DEPOSITION
ISOBE, C
SAITOH, M
[J]. APPLIED PHYSICS LETTERS, 1990, 56 (10) : 907 - 909
[2] PHOTO-PROCESS OF TANTALUM OXIDE-FILMS AND THEIR CHARACTERISTICS
MATSUI, M
OKA, S
YAMAGISHI, K
KUROIWA, K
TARUI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (04): : 506 - 511
[3] QUADRUPLY SELF-ALIGNED STACKED HIGH-CAPACITANCE RAM USING TA2O5 HIGH-DENSITY VLSI DYNAMIC MEMORY
OHTA, K
YAMADA, K
SHIMIZU, K
TARUI, Y
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (03) : 368 - 376
[4] Okabe H., 1978, PHOTOCHEMISTRY SMALL, P177
[5] SHINRIKI H, 1988, P S VLSI TECH, P29
[6] SHINRIKI H, 1989, P S VLSI TECH KYOTO, P25
[7] TANIMOTO S, 1990, 22ND C SOL STAT DEV, P195
[8] TARUI Y, 1987, 19TH C SOL STAT DEV, P219
[9] 1977, OZONE OTHER PHOTOCHE, P644

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