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QUADRUPLY SELF-ALIGNED STACKED HIGH-CAPACITANCE RAM USING TA2O5 HIGH-DENSITY VLSI DYNAMIC MEMORY

被引：82
作者：
OHTA, K
YAMADA, K
SHIMIZU, K
TARUI, Y
机构：
[1] ELECTROTECH LABS,SAKURAMURA,IBARAKI,JAPAN
[2] NIPPON ELECT CO LTD,BASIC TECHNOL RES LABS,ULTRA LSI RES LAB,TAKATSU KU,KAWASAKI 211,JAPAN
[3] NIPPON ELECT CO LTD,DEPT 2ND CIRCUIT ENGN,DIV SYST LSI DEV,NAKAHARA KU,KAWASAKI 211,JAPAN
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 03期
关键词：
D O I：
10.1109/T-ED.1982.20711
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 [电气工程]; 0809 [电子科学与技术];
摘要：
引用
收藏
页码：368 / 376
页数：9
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