A 100 NS 5 V-ONLY 64KX1 MOS DYNAMIC RAM

被引：11

作者：

CHAN, JY

BARNES, JJ

WANG, CY

DEBLASI, JM

GUIDRY, MR

机构：

[1] VLSI DESIGN ASSOC,SARATOGA,CA

[2] FAIRCHILD SEMICOND,MOUNTAIN VIEW,CA 94040

来源：

关键词：

D O I：

10.1109/JSSC.1980.1051480

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：839 / 846

页数：8

共 10 条

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[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (05) : 600 - 606
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[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (05) : 607 - 611