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64-KBIT DYNAMIC MOS RAM
被引:18
作者
:
ARAI, E
论文数:
0
引用数:
0
h-index:
0
ARAI, E
IEDA, N
论文数:
0
引用数:
0
h-index:
0
IEDA, N
机构
:
来源
:
IEEE JOURNAL OF SOLID-STATE CIRCUITS
|
1978年
/ 13卷
/ 03期
关键词
:
D O I
:
10.1109/JSSC.1978.1051049
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:333 / 338
页数:6
相关论文
共 18 条
[1]
AHLQUIST CN, 1976, ISSCC DIGEST TECH PA, P128
[2]
DESIGN OF A HIGH-PERFORMANCE 1024-B SWITCHED CAPACITOR P-CHANNEL IGFET MEMORY CHIP
BOLL, HJ
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BOLL, HJ
LYNCH, WT
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
LYNCH, WT
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1973,
SC 8
(05)
: 310
-
318
[3]
PERIPHERAL CIRCUITS FOR ONE TRANSISTOR CELL MOS RAMS
FOSS, RC
论文数:
0
引用数:
0
h-index:
0
机构:
MICROSYST INT LTD,OTTAWA,ONTARIO,CANADA
MICROSYST INT LTD,OTTAWA,ONTARIO,CANADA
FOSS, RC
HARLAND, R
论文数:
0
引用数:
0
h-index:
0
机构:
MICROSYST INT LTD,OTTAWA,ONTARIO,CANADA
MICROSYST INT LTD,OTTAWA,ONTARIO,CANADA
HARLAND, R
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1975,
10
(05)
: 255
-
261
[4]
HELLER LG, 1975, ISSCC DIG TECH P FEB, P112
[5]
8K B RANDOM-ACCESS MEMORY CHIP USING ONE-DEVICE FET CELL
HOFFMAN, WK
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,SYST PROD DIV,ESSEX JUNCTION,VT 05452
IBM CORP,SYST PROD DIV,ESSEX JUNCTION,VT 05452
HOFFMAN, WK
KALTER, HL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,SYST PROD DIV,ESSEX JUNCTION,VT 05452
IBM CORP,SYST PROD DIV,ESSEX JUNCTION,VT 05452
KALTER, HL
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1973,
SC 8
(05)
: 298
-
305
[6]
64K MOS RAM DESIGN
IEDA, N
论文数:
0
引用数:
0
h-index:
0
IEDA, N
ARAI, E
论文数:
0
引用数:
0
h-index:
0
ARAI, E
KIUCHI, K
论文数:
0
引用数:
0
h-index:
0
KIUCHI, K
OHMORI, Y
论文数:
0
引用数:
0
h-index:
0
OHMORI, Y
TAKEYA, K
论文数:
0
引用数:
0
h-index:
0
TAKEYA, K
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1978,
17
: 57
-
63
[7]
SINGLE TRANSISTOR MOS RAM USING A SHORT-CHANNEL MOS-TRANSISTOR
IEDA, N
论文数:
0
引用数:
0
h-index:
0
IEDA, N
OHMORI, Y
论文数:
0
引用数:
0
h-index:
0
OHMORI, Y
TAKEYA, K
论文数:
0
引用数:
0
h-index:
0
TAKEYA, K
YANO, T
论文数:
0
引用数:
0
h-index:
0
YANO, T
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1978,
13
(02)
: 218
-
224
[8]
IEDA N, 1977, 9TH C SOL STAT DEV D, P17
[9]
STABILIZATION OF SIO2 PASSIVATION LAYERS WITH P2O5
KERR, DR
论文数:
0
引用数:
0
h-index:
0
KERR, DR
LOGAN, JS
论文数:
0
引用数:
0
h-index:
0
LOGAN, JS
BURKHARDT, PJ
论文数:
0
引用数:
0
h-index:
0
BURKHARDT, PJ
PLISKIN, WA
论文数:
0
引用数:
0
h-index:
0
PLISKIN, WA
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1964,
8
(04)
: 376
-
&
[10]
FORMATION OF SILICON-NITRIDE AT A SI-SIO2 INTERFACE DURING LOCAL OXIDATION OF SILICON AND DURING HEAT-TREATMENT OF OXIDIZED SILICON IN NH3 GAS
KOOI, E
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
KOOI, E
VANLIEROP, JG
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
VANLIEROP, JG
APPELS, JA
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
APPELS, JA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1976,
123
(07)
: 1117
-
1120
←
1
2
→
共 18 条
[1]
AHLQUIST CN, 1976, ISSCC DIGEST TECH PA, P128
[2]
DESIGN OF A HIGH-PERFORMANCE 1024-B SWITCHED CAPACITOR P-CHANNEL IGFET MEMORY CHIP
BOLL, HJ
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BOLL, HJ
LYNCH, WT
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
LYNCH, WT
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1973,
SC 8
(05)
: 310
-
318
[3]
PERIPHERAL CIRCUITS FOR ONE TRANSISTOR CELL MOS RAMS
FOSS, RC
论文数:
0
引用数:
0
h-index:
0
机构:
MICROSYST INT LTD,OTTAWA,ONTARIO,CANADA
MICROSYST INT LTD,OTTAWA,ONTARIO,CANADA
FOSS, RC
HARLAND, R
论文数:
0
引用数:
0
h-index:
0
机构:
MICROSYST INT LTD,OTTAWA,ONTARIO,CANADA
MICROSYST INT LTD,OTTAWA,ONTARIO,CANADA
HARLAND, R
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1975,
10
(05)
: 255
-
261
[4]
HELLER LG, 1975, ISSCC DIG TECH P FEB, P112
[5]
8K B RANDOM-ACCESS MEMORY CHIP USING ONE-DEVICE FET CELL
HOFFMAN, WK
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,SYST PROD DIV,ESSEX JUNCTION,VT 05452
IBM CORP,SYST PROD DIV,ESSEX JUNCTION,VT 05452
HOFFMAN, WK
KALTER, HL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,SYST PROD DIV,ESSEX JUNCTION,VT 05452
IBM CORP,SYST PROD DIV,ESSEX JUNCTION,VT 05452
KALTER, HL
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1973,
SC 8
(05)
: 298
-
305
[6]
64K MOS RAM DESIGN
IEDA, N
论文数:
0
引用数:
0
h-index:
0
IEDA, N
ARAI, E
论文数:
0
引用数:
0
h-index:
0
ARAI, E
KIUCHI, K
论文数:
0
引用数:
0
h-index:
0
KIUCHI, K
OHMORI, Y
论文数:
0
引用数:
0
h-index:
0
OHMORI, Y
TAKEYA, K
论文数:
0
引用数:
0
h-index:
0
TAKEYA, K
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1978,
17
: 57
-
63
[7]
SINGLE TRANSISTOR MOS RAM USING A SHORT-CHANNEL MOS-TRANSISTOR
IEDA, N
论文数:
0
引用数:
0
h-index:
0
IEDA, N
OHMORI, Y
论文数:
0
引用数:
0
h-index:
0
OHMORI, Y
TAKEYA, K
论文数:
0
引用数:
0
h-index:
0
TAKEYA, K
YANO, T
论文数:
0
引用数:
0
h-index:
0
YANO, T
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1978,
13
(02)
: 218
-
224
[8]
IEDA N, 1977, 9TH C SOL STAT DEV D, P17
[9]
STABILIZATION OF SIO2 PASSIVATION LAYERS WITH P2O5
KERR, DR
论文数:
0
引用数:
0
h-index:
0
KERR, DR
LOGAN, JS
论文数:
0
引用数:
0
h-index:
0
LOGAN, JS
BURKHARDT, PJ
论文数:
0
引用数:
0
h-index:
0
BURKHARDT, PJ
PLISKIN, WA
论文数:
0
引用数:
0
h-index:
0
PLISKIN, WA
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1964,
8
(04)
: 376
-
&
[10]
FORMATION OF SILICON-NITRIDE AT A SI-SIO2 INTERFACE DURING LOCAL OXIDATION OF SILICON AND DURING HEAT-TREATMENT OF OXIDIZED SILICON IN NH3 GAS
KOOI, E
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
KOOI, E
VANLIEROP, JG
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
VANLIEROP, JG
APPELS, JA
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
APPELS, JA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1976,
123
(07)
: 1117
-
1120
←
1
2
→