DH LASERS FABRICATED BY NEW III-V SEMICONDUCTOR MATERIAL INASPSB

被引：29

作者：

KOBAYASHI, N

HORIKOSHI, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 10期

关键词：

D O I：

10.1143/JJAP.19.L641

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：L641 / L644

页数：4

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