学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
LIQUID-PHASE EPITAXIAL-GROWTH OF INASXSBYP1-X-Y LAYERS ON INAS
被引:20
作者
:
GERTNER, ER
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
GERTNER, ER
[
1
]
CHEUNG, DT
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
CHEUNG, DT
[
1
]
ANDREWS, AM
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
ANDREWS, AM
[
1
]
LONGO, JT
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
LONGO, JT
[
1
]
机构
:
[1]
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
来源
:
JOURNAL OF ELECTRONIC MATERIALS
|
1977年
/ 6卷
/ 02期
关键词
:
D O I
:
10.1007/BF02660381
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:163 / 172
页数:10
相关论文
共 8 条
[1]
ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS
ABRAHAMS, MS
论文数:
0
引用数:
0
h-index:
0
ABRAHAMS, MS
BUIOCCHI, CJ
论文数:
0
引用数:
0
h-index:
0
BUIOCCHI, CJ
[J].
JOURNAL OF APPLIED PHYSICS,
1965,
36
(09)
: 2855
-
&
[2]
DISLOCATION MORPHOLOGY IN GRADED HETEROJUNCTIONS - GAAS1-XPX
ABRAHAMS, MS
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton, 08540, NJ
ABRAHAMS, MS
WEISBERG, LR
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton, 08540, NJ
WEISBERG, LR
BUIOCCHI, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton, 08540, NJ
BUIOCCHI, CJ
BLANC, J
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton, 08540, NJ
BLANC, J
[J].
JOURNAL OF MATERIALS SCIENCE,
1969,
4
(03)
: 223
-
&
[3]
LIQUID-PHASE EPITAXIAL-GROWTH OF STEPWISE-GRADED INAS1-XSBX-INAS HETEROSTRUCTURES
ANDREWS, AM
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
ANDREWS, AM
CHEUNG, DT
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
CHEUNG, DT
GERTNER, ER
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
GERTNER, ER
LONGO, JT
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
LONGO, JT
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1976,
13
(04):
: 961
-
963
[4]
GROWTH AND CHARACTERIZATION OF LIQUID-PHASE EPITAXIAL INAS1-XPX
ANTYPAS, GA
论文数:
0
引用数:
0
h-index:
0
ANTYPAS, GA
YEP, TO
论文数:
0
引用数:
0
h-index:
0
YEP, TO
[J].
JOURNAL OF APPLIED PHYSICS,
1971,
42
(08)
: 3201
-
&
[5]
CLAWSON AR, 1971, J VAC SCI TECHNOL, V9, P976
[6]
CROSS-HATCH PATTERN IN GAAS1-XPX EPITAXIALLY GROWN ON GAAS SUBSTRATE
KISHINO, S
论文数:
0
引用数:
0
h-index:
0
KISHINO, S
OGIRIMA, M
论文数:
0
引用数:
0
h-index:
0
OGIRIMA, M
KURATA, K
论文数:
0
引用数:
0
h-index:
0
KURATA, K
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1972,
119
(05)
: 617
-
&
[7]
IMPROVED SURFACE QUALITY OF SOLUTION GROWN GAAS AND PB1-XSNXTE EPITAXIAL LAYERS - NEW TECHNIQUE
LONGO, JT
论文数:
0
引用数:
0
h-index:
0
LONGO, JT
HARRIS, JS
论文数:
0
引用数:
0
h-index:
0
HARRIS, JS
CHU, JC
论文数:
0
引用数:
0
h-index:
0
CHU, JC
GERTNER, ER
论文数:
0
引用数:
0
h-index:
0
GERTNER, ER
[J].
JOURNAL OF CRYSTAL GROWTH,
1972,
15
(02)
: 107
-
&
[8]
NEW GRADING LAYER FOR LIQUID EPITAXIAL-GROWTH OF GAXIN1-XAS ON GAAS SUBSTRATE
NAGAI, H
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO,JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO,JAPAN
NAGAI, H
NOGUCHI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO,JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO,JAPAN
NOGUCHI, Y
[J].
APPLIED PHYSICS LETTERS,
1975,
26
(03)
: 108
-
110
←
1
→
共 8 条
[1]
ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS
ABRAHAMS, MS
论文数:
0
引用数:
0
h-index:
0
ABRAHAMS, MS
BUIOCCHI, CJ
论文数:
0
引用数:
0
h-index:
0
BUIOCCHI, CJ
[J].
JOURNAL OF APPLIED PHYSICS,
1965,
36
(09)
: 2855
-
&
[2]
DISLOCATION MORPHOLOGY IN GRADED HETEROJUNCTIONS - GAAS1-XPX
ABRAHAMS, MS
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton, 08540, NJ
ABRAHAMS, MS
WEISBERG, LR
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton, 08540, NJ
WEISBERG, LR
BUIOCCHI, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton, 08540, NJ
BUIOCCHI, CJ
BLANC, J
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton, 08540, NJ
BLANC, J
[J].
JOURNAL OF MATERIALS SCIENCE,
1969,
4
(03)
: 223
-
&
[3]
LIQUID-PHASE EPITAXIAL-GROWTH OF STEPWISE-GRADED INAS1-XSBX-INAS HETEROSTRUCTURES
ANDREWS, AM
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
ANDREWS, AM
CHEUNG, DT
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
CHEUNG, DT
GERTNER, ER
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
GERTNER, ER
LONGO, JT
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
LONGO, JT
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1976,
13
(04):
: 961
-
963
[4]
GROWTH AND CHARACTERIZATION OF LIQUID-PHASE EPITAXIAL INAS1-XPX
ANTYPAS, GA
论文数:
0
引用数:
0
h-index:
0
ANTYPAS, GA
YEP, TO
论文数:
0
引用数:
0
h-index:
0
YEP, TO
[J].
JOURNAL OF APPLIED PHYSICS,
1971,
42
(08)
: 3201
-
&
[5]
CLAWSON AR, 1971, J VAC SCI TECHNOL, V9, P976
[6]
CROSS-HATCH PATTERN IN GAAS1-XPX EPITAXIALLY GROWN ON GAAS SUBSTRATE
KISHINO, S
论文数:
0
引用数:
0
h-index:
0
KISHINO, S
OGIRIMA, M
论文数:
0
引用数:
0
h-index:
0
OGIRIMA, M
KURATA, K
论文数:
0
引用数:
0
h-index:
0
KURATA, K
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1972,
119
(05)
: 617
-
&
[7]
IMPROVED SURFACE QUALITY OF SOLUTION GROWN GAAS AND PB1-XSNXTE EPITAXIAL LAYERS - NEW TECHNIQUE
LONGO, JT
论文数:
0
引用数:
0
h-index:
0
LONGO, JT
HARRIS, JS
论文数:
0
引用数:
0
h-index:
0
HARRIS, JS
CHU, JC
论文数:
0
引用数:
0
h-index:
0
CHU, JC
GERTNER, ER
论文数:
0
引用数:
0
h-index:
0
GERTNER, ER
[J].
JOURNAL OF CRYSTAL GROWTH,
1972,
15
(02)
: 107
-
&
[8]
NEW GRADING LAYER FOR LIQUID EPITAXIAL-GROWTH OF GAXIN1-XAS ON GAAS SUBSTRATE
NAGAI, H
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO,JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO,JAPAN
NAGAI, H
NOGUCHI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO,JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO,JAPAN
NOGUCHI, Y
[J].
APPLIED PHYSICS LETTERS,
1975,
26
(03)
: 108
-
110
←
1
→