THEORY OF THE METAL-INSULATOR-SEMICONDUCTOR THYRISTOR

被引：15

作者：

HABIB, SED ^{[1
]}

SIMMONS, JG ^{[1
]}

机构：

[1] UNIV TORONTO, DEPT ELECT ENGN, TORONTO M5S 1A1, ONTARIO, CANADA

来源：

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 1980年 / 127卷 / 04期

关键词：

Compendex;

D O I：

10.1049/ip-i-1.1980.0037

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

THYRISTORS

引用

收藏

页码：176 / 182

页数：7

相关论文

共 14 条

[1] CHEK KD, 1977, THESIS U TORONTO
[2] CHARACTERISTICS OF 3-TERMINAL METAL-TUNNEL OXIDE-N-P+ DEVICES
CHIK, KC
SIMMONS, JG
[J]. SOLID-STATE ELECTRONICS, 1979, 22 (06) : 589 - 594
[3] EXPERIMENTAL STUDIES OF SWITCHING IN METAL SEMI-INSULATING N-P+ SILICON DEVICES
ELBADRY, A
SIMMONS, JG
[J]. SOLID-STATE ELECTRONICS, 1977, 20 (12) : 963 - 966
[4] THEORY OF SWITCHING IN P-N-INSULATOR (TUNNEL)-METAL DEVICES .1. PUNCHTHROUGH MODE
HABIB, SED
SIMMONS, JG
[J]. SOLID-STATE ELECTRONICS, 1979, 22 (02) : 181 - 192
[5] HABIB SED, UNPUBLISHED
[6] KROGER H, 1978, SOLID STATE ELECTRON, V21, P643, DOI 10.1016/0038-1101(78)90331-3
[7] CONTROLLED-INVERSION TRANSISTORS
KROGER, H
WEGENER, HAR
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (05) : 303 - 304
[8] STEADY-STATE CHARACTERISTICS OF 3 TERMINAL INVERSION-CONTROLLED SWITCHES
KROGER, H
WEGENER, HAR
[J]. SOLID-STATE ELECTRONICS, 1978, 21 (04) : 655 - 661
[9] BISTABLE IMPEDANCE STATES IN MIS STRUCTURES THROUGH CONTROLLED INVERSION
KROGER, H
WEGENER, HAR
[J]. APPLIED PHYSICS LETTERS, 1973, 23 (07) : 397 - 399
[10] DIGITAL OPTICAL METAL-INSULATOR SILICON THYRISTOR (OMIST)
NASSIBIAN, AG
CALLIGARO, RB
SIMMONS, JG
[J]. IEE JOURNAL ON SOLID-STATE AND ELECTRON DEVICES, 1978, 2 (05): : 149 - 154