NEGATIVE-RESISTANCE CHARACTERISTICS OF ZENER DIODE AT ONSET OF AVALANCHE BREAKDOWN

被引：2

作者：

ZHANG, HB ^{[1
]}

TAKAOKA, A ^{[1
]}

URA, K ^{[1
]}

机构：

[1] OSAKA SANGYO UNIV,FAC ENGN,DEPT ELECT & ELECTR ENGN,DAITO,OSAKA 574,JAPAN

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1994年 / 77卷 / 06期

关键词：

D O I：

10.1080/00207219408926109

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In a low current region (similar to 100 mu A) within a narrow voltage near the onset of primary breakdown, a negative resistance effect has been observed in a 4 kV high-voltage Zener diode. The region is much lower than the secondary breakdown region (similar to 100 mA) where negative resistance phenomena have previously been reported for Zener diodes. Measured I-V and oscillation characteristics of high- and low-voltage (<200 V) Zener diodes in the low current region are described, confirming the presence of negative resistance.

引用

页码：899 / 905

页数：7

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