GAAS-FET DEMODULATOR AND DOWN-CONVERTER FOR OPTICAL-MICROWAVE LINKS

被引：11

作者：

RAUSCHER, C

GOLDBERG, L

YUREK, AM

机构：

[1] US Naval Research Lab, Washington,, DC, USA, US Naval Research Lab, Washington, DC, USA

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 13期

关键词：

DEMODULATORS - TELECOMMUNICATION LINKS; MICROWAVE; -; TRANSISTORS; FIELD EFFECT;

D O I：

10.1049/el:19860482

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A single-gate GaAs FET is utilised to simultaneously perform the photodetection and down-conversion functions of an optical-microwave link receiver, with the transistor supplying its own local oscillator signal through self-oscillation and harmonic generation. Operation up through 89 GHz is demonstrated.

引用

页码：705 / 706

页数：2

共 4 条

[1] MILLIMETER-WAVE RESPONSE OF INGAASP LASERS
BOWERS, JE
[J]. ELECTRONICS LETTERS, 1985, 21 (25-2) : 1195 - 1197
[2] DONALD DK, 1985, SPIE C WASHINGTON
[3] 35 GHZ MICROWAVE SIGNAL GENERATION WITH AN INJECTION-LOCKED LASER DIODE
GOLDBERG, L
YUREK, AM
TAYLOR, HF
WELLER, JF
[J]. ELECTRONICS LETTERS, 1985, 21 (18) : 814 - 815
[4] SIMULATION OF NON-LINEAR MICROWAVE FET PERFORMANCE USING A QUASI-STATIC MODEL
RAUSCHER, C
WILLING, HA
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1979, 27 (10) : 834 - 840

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