SIMULATION OF NON-LINEAR MICROWAVE FET PERFORMANCE USING A QUASI-STATIC MODEL

被引：33

作者：

RAUSCHER, C

WILLING, HA

机构：

[1] Microwave Technology Branch, Electronics Technology Division, Naval Research Laboratory, Washington

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1979年 / 27卷 / 10期

关键词：

D O I：

10.1109/TMTT.1979.1129744

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A technique is described for accurately predicting nonlinear performance of microwave GaAs field-effect transistors in arbitrary circuit embedding. The approach is based on a quasi-static device model which is derived from measured bias and frequency dependence of the small-signal device S parameters. Excellent agreement is demonstrated between experimental and predicted “load-pull” characteristics at X band. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：834 / 840

页数：7

共 12 条

[1]

Chua L.O., 1969, INTRO NONLINEAR NETW

[2]

FUKUI H, 1978, DEC INT EL DEV M TEC, P140

[3] 2-SIGNAL METHOD OF MEASURING LARGE-SIGNAL S-PARAMETERS OF TRANSISTORS [J].