METHOD FOR MEASURING 3RD-ORDER INTERMODULATION DISTORTION IN GAAS FETS

被引:5
作者
RAUSCHER, C
TUCKER, RS
机构
[1] USN,RES LAB,WASHINGTON,DC 20375
[2] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
关键词
D O I
10.1049/el:19770496
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:701 / 702
页数:2
相关论文
共 3 条
[1]  
Sechi F. N., 1977, 1977 International Solid-State Circuits Conference. (Digest of Technical Papers), P164
[2]  
Takayama Y., 1976, 1976 IEEE MTT-S International Microwave Symposium, P218
[3]   MODELING 3RD-ORDER INTERMODULATION DISTORTION PROPERTIES OF A GAAS FET [J].
TUCKER, RS ;
RAUSCHER, C .
ELECTRONICS LETTERS, 1977, 13 (17) :508-510