FLUENCE DEPENDENCE OF DISPLACEMENT DAMAGE, RESIDUAL DEFECTS, AND ELECTRICAL-PROPERTIES OF HIGH-TEMPERATURE-ANNEALED SE-+-IMPLANTED GAAS

被引：14

作者：

BHATTACHARYA, RS

PRONKO, PP

YEO, YK

RAI, AK

PARK, YS

NARAYAN, J

机构：

[1] USAF,WRIGHT AERONAUT LABS,AVION LAB,WRIGHT PATTERSON AFB,OH 45433

[2] OAK RIDGE NATL LAB,DIV SOLID STATE,OAK RIDGE,TN 37830

来源：

关键词：

D O I：

10.1063/1.331357

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4821 / 4825

页数：5

共 7 条

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EISEN, FH
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[2] DEPTH PROFILES OF LATTICE DISORDER RESULTING FORM ION BOMBARDMENT OF SILICON SINGLE CRYSTALS
FELDMAN, LC
RODGERS, JW
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) : 3776 - &
[3] GAMO K, 1977, SOLID STATE ELECTRON, V29, P213
[4] Hart R. R., 1970, Radiation Effects, V6, P51, DOI 10.1080/00337577008235045
[5] Picraux S. T., 1971, Radiation Effects, V7, DOI 10.1080/00337577108232569
[6] ROOSENDAAL HE, 1974, THESIS U AMSTERDAM
[7] THOMPSON MW, 1969, DEFECTS RAD DAMAGE M, P149