EHD-PHOTOLUMINESCENCE KINETICS IN DOPED GE

被引：2

作者：

ZHURKIN, BG ^{[1
]}

KARUZKII, AL ^{[1
]}

STRAHOV, VP ^{[1
]}

FRADKOV, VA ^{[1
]}

机构：

[1] PN LEBEDEVS PHYS INST,MOSCOW,USSR

来源：

SOLID STATE COMMUNICATIONS | 1976年 / 20卷 / 03期

关键词：

D O I：

10.1016/0038-1098(76)90177-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：207 / 209

页数：3

共 18 条

[1]

Alekseev A. S., 1970, Fizika Tverdogo Tela, V12, P3516

[2]

ASTEMIROV TA, 1975, 2 RESP K SUKH, P45

[3] ELECTRON-HOLE DROPS IN DOPED GE [J].

BENOITAL.C ;

VOOS, M .

SOLID STATE COMMUNICATIONS, 1972, 11 (11) :1585-+

[4] ELECTRON-HOLE CONDENSATION IN SEMICONDUCTORS [J].

JEFFRIES, CD .

SCIENCE, 1975, 189 (4207) :955-964

[5]

KARUZSKII AL, 1975, FIZ TVERD TELA+, V17, P3104

[6]

KARUZSKII AL, 1975, JETP LETT+, V22, P29

[7] NEW PHENOMENA IN EXCITON CONDENSATION IN GERMANIUM [J].

LO, TK ;

FELDMAN, BJ ;

JEFFRIES, CD .

PHYSICAL REVIEW LETTERS, 1973, 31 (04) :224-226

[8] PROPERTIES OF ELECTRON-HOLE DROP IN N-DOPED GERMANIUM AND SILICON [J].

MAHLER, G ;

BIRMAN, JL .

PHYSICAL REVIEW B, 1975, 12 (08) :3221-3227

[9]

MARTIN RW, 1974, PHYS STATUS SOLIDI B, V61, P233

[10]

MARTIN RW, 1974, THESIS STUTTGART

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