PROPERTIES OF ELECTRON-HOLE DROP IN N-DOPED GERMANIUM AND SILICON

被引：18

作者：

MAHLER, G ^{[1
]}

BIRMAN, JL ^{[1
]}

机构：

[1] CITY UNIV NEW YORK,CITY COLL,DEPT PHYS,NEW YORK,NY 10031

来源：

PHYSICAL REVIEW B | 1975年 / 12卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.12.3221

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3221 / 3227

页数：7

共 16 条

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