EXPERIMENTAL INVESTIGATION OF DEFECT STATES IN AMORPHOUS-CHALCOGENIDE GLASSES

被引:31
作者
PFISTER, G
TAYLOR, PC
机构
[1] XEROX CORP,WEBSTER,NY 14580
[2] USN,RES LAB,WASHINGTON,DC 20375
关键词
D O I
10.1016/0022-3093(80)90299-9
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:793 / 805
页数:13
相关论文
共 30 条
[11]  
HIGASHI GS, UNPUBLISHED
[12]   VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS [J].
KASTNER, M ;
ADLER, D ;
FRITZSCHE, H .
PHYSICAL REVIEW LETTERS, 1976, 37 (22) :1504-1507
[13]   EVIDENCE FOR NEUTRALITY OF LUMINESCENCE-CENTERS IN CHALCOGENIDE GLASSES [J].
KASTNER, M ;
HUDGENS, SJ .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 37 (06) :665-681
[14]  
LICCIARDELLO DC, UNPUBLISHED
[15]   STATES IN GAP AND RECOMBINATION IN AMORPHOUS-SEMICONDUCTORS [J].
MOTT, NF ;
DAVIS, EA ;
STREET, RA .
PHILOSOPHICAL MAGAZINE, 1975, 32 (05) :961-996
[16]   ELECTRONS IN GLASS [J].
MOTT, NF .
CONTEMPORARY PHYSICS, 1977, 18 (03) :225-245
[17]   CONDUCTION IN NON-CRYSTALLINE MATERIALS .3. LOCALIZED STATES IN A PSEUDOGAP AND NEAR EXTREMITIES OF CONDUCTION AND VALENCE BANDS [J].
MOTT, NF .
PHILOSOPHICAL MAGAZINE, 1969, 19 (160) :835-&
[18]   ELECTRONS IN DISORDERED STRUCTURES [J].
MOTT, NF .
ADVANCES IN PHYSICS, 1967, 16 (61) :49-+
[19]   LUMINESCENCE WITH SHORT DECAY TIME IN ARSENIC CHALCOGENIDE GLASSES [J].
MURAYAMA, K ;
NINOMIYA, T ;
SUZUKI, H ;
MORIGAKI, K .
SOLID STATE COMMUNICATIONS, 1977, 24 (02) :197-200
[20]   TIME-RESOLVED OPTICAL-ABSORPTION AND MOBILITY OF LOCALIZED CHARGE-CARRIERS IN A-AS2SE3 [J].
ORENSTEIN, J ;
KASTNER, M .
PHYSICAL REVIEW LETTERS, 1979, 43 (02) :161-165