IDENTIFICATION OF BAND-EDGE OPTICAL-TRANSITION TYPES IN TENSILE-STRAINED QUANTUM-WELLS

被引:3
作者
BALIGA, A [1 ]
ANDERSON, NG [1 ]
机构
[1] UNIV MASSACHUSETTS,SEMICOND SPECT LAB,AMHERST,MA 01003
关键词
D O I
10.1109/3.236149
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Either electron-to-light-hole e-lh or electron-to-heavy-hole e-hh transitions can define the optical gap in tensile strained quantum wells. Transition types near the band-edge must thus be determined experimentally for these structures, as the lowest energy transition can not be assumed to be of the e-hh type as in unstrained and compressively strained structures. We have developed a new characterization technique based on photoluminescence excitation spectroscopy (PLE) which allows simple and direct identification of band-edge transition types in quantum wells. A ''ratio curve'' is generated by pointwise division of one PLE spectrum by a second PLE spectrum. The two PLE spectra are obtained using orthogonal polarizations of the excitation beam, which is incident on the sample surface at an oblique angle, and the transition types near the band edge are identified by simple visual inspection of the ratio curve. In this paper, we describe and assess the theoretical foundation for our ratio method, detail our experimental procedure, present PLE spectra and ratio curves for several quantum wells, and determine optimum experimental conditions and the physical origin of features in the ratio curve through investigation of the influence of several experimental parameters.
引用
收藏
页码:1355 / 1363
页数:9
相关论文
共 16 条
[1]   POLARIZED EXCITATION LUMINESCENCE OF SEMICONDUCTOR QUANTUM-WELLS [J].
BALIGA, A ;
ANDERSON, NG .
APPLIED PHYSICS LETTERS, 1992, 60 (03) :283-285
[2]   TAILORING OF HOLE EIGENENERGIES IN STRAINED GAASP/ALGAAS SINGLE QUANTUM WELLS GROWN BY ATMOSPHERIC-PRESSURE ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION [J].
BERTOLET, DC ;
HSU, JK ;
LAU, KM .
APPLIED PHYSICS LETTERS, 1988, 53 (25) :2501-2503
[3]  
Bir G.L., 1974, SYMMETRY STRAIN INDU
[4]   LOW THRESHOLD, 633 NM, SINGLE TENSILE-STRAINED QUANTUM-WELL GA0.6IN0.4P/(ALXGA1-X)0.5IN0.5P LASER [J].
BOUR, DP ;
TREAT, DW ;
THORNTON, RL ;
PAOLI, TL ;
BRINGANS, RD ;
KRUSOR, BS ;
GEELS, RS ;
WELCH, DF ;
WANG, TY .
APPLIED PHYSICS LETTERS, 1992, 60 (16) :1927-1929
[5]  
COLLIN RE, 1966, F MICROWAVE ENG, P46
[6]   ELECTROABSORPTION ENHANCEMENT IN TENSILE STRAINED QUANTUM-WELLS VIA ABSORPTION-EDGE MERGING [J].
GOMATAM, BN ;
ANDERSON, NG .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1992, 28 (06) :1496-1507
[7]  
GOMATAM BN, 1990, C LEOS
[8]   THEORETICAL AND EXPERIMENTAL STUDIES OF OPTICAL-ABSORPTION IN STRAINED QUANTUM-WELL STRUCTURES FOR OPTICAL MODULATORS [J].
HONG, SC ;
KOTHIYAL, GP ;
DEBBAR, N ;
BHATTACHARYA, P ;
SINGH, J .
PHYSICAL REVIEW B, 1988, 37 (02) :878-885
[9]   BAND STRUCTURE OF INDIUM ANTIMONIDE [J].
KANE, EO .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) :249-261
[10]   POLARIZATION INSENSITIVE TRAVELING-WAVE TYPE AMPLIFIER USING STRAINED MULTIPLE QUANTUM-WELL STRUCTURE [J].
MAGARI, K ;
OKAMOTO, M ;
YASAKA, H ;
SATO, K ;
NOGUCHI, Y ;
MIKAMI, O .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (08) :556-558