GROWTH OF IRON-DOPED EPITAXIAL LAYERS FOR GAAS FIELD-EFFECT TRANSISTORS

被引：14

作者：

NAKAI, K ^{[1
]}

KITAHARA, K ^{[1
]}

SHIBATOMI, A ^{[1
]}

OHKAWA, S ^{[1
]}

机构：

[1] FUJITSU LABS LTD,KAWASAKI 211,JAPAN

来源：

关键词：

D O I：

10.1149/1.2133125

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1635 / 1640

页数：6

共 27 条

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[2] BARRERA J, 1975, 5TH P BIENN CORN EL, P135
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TAKANASHI, H
[J]. APPLIED PHYSICS LETTERS, 1973, 23 (03) : 150 - 151
[8] ON TEMPERATURE DEPENDENCE OF IRON ACCEPTOR LEVEL IN GAAS1 (RESISTIVITY HALL MOBILITY T/E)
HAISTY, RW
[J]. APPLIED PHYSICS LETTERS, 1965, 7 (08) : 208 - &
[9] HAISTY RW, 1965, 7 P INT C PHYS SEM, P1161
[10] HEWITT BS, 1976, 6TH INT S GAAS REL C, P24