PHOTOLUMINESCENCE DUE TO LATTICE-MISMATCH DEFECTS IN HIGH-PURITY ZNSE LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引：19

作者：

SHIBATA, N ^{[1
]}

OHKI, A ^{[1
]}

ZEMBUTSU, S ^{[1
]}

KATSUI, A ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL CORP,OPTOELECTR LABS,TOKAI,IBARAKI 31911,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1988年 / 27卷 / 03期

关键词：

PHOTOLUMINESCENCE - SEMICONDUCTING FILMS - Growth - SEMICONDUCTOR MATERIALS - Impurities;

D O I：

10.1143/JJAP.27.L441

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-purity ZnSe layers grown by metalorganic vapor phase epitaxy exhibit an unusually strong luminescence band at 2. 60 eV (Y band), which is extremely sensitive to residual impurity concentration. Y emission depends on the lattice mismatch between the epilayer and substrate. The emission decreases with the use of a lattice-matched In//xGa//1// minus //xAs substrate. With the GaAs substrate, the emission intensity varies with layer thickness reflecting lattice relaxation in the ZnSe/GaAs structure.

引用

页码：L441 / L443

页数：3

共 9 条

[1] BATSTONE JL, 1985, 1985 P MICR SEM MAT, P383
[2] THE OPTOELECTRONIC PROPERTIES OF DONORS IN ORGANO-METALLIC GROWN ZINC SELENIDE
DEAN, PJ
PITT, AD
WRIGHT, PJ
YOUNG, ML
COCKAYNE, B
[J]. PHYSICA B & C, 1983, 116 (1-3): : 508 - 513
[3] COMPARISON OF MOCVD-GROWN WITH CONVENTIONAL II-VI MATERIALS PARAMETERS FOR EL THIN-FILMS
DEAN, PJ
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1984, 81 (02): : 625 - 646
[4] ISSIKI M, 1985, J CRYST GROWTH, V73, P221
[5] COHERENT GROWTH OF ZNSE ON GAAS BY MOCVD
MITSUHASHI, H
MITSUISHI, I
MIZUTA, M
KUKIMOTO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (08): : L578 - L580
[6] LUMINESCENCE STUDIES OF INDIVIDUAL DISLOCATIONS IN II-VI (ZNSE) AND III-V (INP) SEMICONDUCTORS
MYHAJLENKO, S
BATSTONE, JL
HUTCHINSON, HJ
STEEDS, JW
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (35): : 6477 - 6492
[7] HIGH-QUALITY ZNSE FILM GROWTH BY 0.1-ATM MOVPE UNDER THE DIETHYLZINC DIFFUSION-LIMITED CONDITION
SHIBATA, N
OHKI, A
ZEMBUTSU, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1987, 26 (08): : 1305 - 1309
[8] SHIBATA N, 1988, J CRYSTAL GROWTH, V86, P224
[9] Yoneda K., 1986, Sanyo Technical Review, V18, P65

← 1 →