HIGH-QUALITY ZNSE FILM GROWTH BY 0.1-ATM MOVPE UNDER THE DIETHYLZINC DIFFUSION-LIMITED CONDITION

被引：24

作者：

SHIBATA, N

OHKI, A

ZEMBUTSU, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1987年 / 26卷 / 08期

关键词：

D O I：

10.1143/JJAP.26.1305

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1305 / 1309

页数：5

共 16 条

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[2] COMPARISON OF MOCVD-GROWN WITH CONVENTIONAL II-VI MATERIALS PARAMETERS FOR EL THIN-FILMS
DEAN, PJ
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1984, 81 (02): : 625 - 646
[3] REACTOR PRESSURE-DEPENDENCE OF PROPERTIES OF UNDOPED ZNSE GROWN BY LOW-PRESSURE OMVPE
FUJITA, S
YODO, T
MATSUDA, Y
SASAKI, A
[J]. JOURNAL OF CRYSTAL GROWTH, 1985, 71 (01) : 169 - 172
[4] LATTICE-MISMATCH EFFECTS ON PROPERTIES IN ZNSE LAYER GROWN ON GAAS SUBSTRATE BY LOW-PRESSURE OMVPE
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YODO, T
SASAKI, A
[J]. JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) : 27 - 30
[5] MOCVD GROWTH OF ZNSE FILMS USING DIETHYLSELENIDE
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JONES, KA
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 66 (01) : 231 - 234
[6] CONDUCTION MECHANISM IN LOW-RESISTIVITY N-TYPE ZNSE PREPARED BY ORGANO-METALLIC CHEMICAL VAPOR-DEPOSITION
STUTIUS, W
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) : 284 - 291
[7] ORGANOMETALLIC VAPOR-DEPOSITION OF EPITAXIAL ZNSE FILMS ON GAAS SUBSTRATES
STUTIUS, W
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 656 - 658
[8] PHOTO-LUMINESCENCE AND HETEROJUNCTION PROPERTIES OF ZNSXSE1-X EPITAXIAL LAYERS ON GAAS AND GE GROWN BY ORGANOMETALLIC CVD
STUTIUS, W
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (01) : 95 - 109
[9] UWAI K, 1984, 16TH P 1984 INT C SO, P667
[10] THE ORGANO-METALLIC CHEMICAL VAPOR-DEPOSITION OF ZNS AND ZNSE AT ATMOSPHERIC-PRESSURE
WRIGHT, PJ
COCKAYNE, B
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) : 148 - 154

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