REACTOR PRESSURE-DEPENDENCE OF PROPERTIES OF UNDOPED ZNSE GROWN BY LOW-PRESSURE OMVPE

被引：26

作者：

FUJITA, S

YODO, T

MATSUDA, Y

SASAKI, A

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1985年 / 71卷 / 01期

关键词：

D O I：

10.1016/0022-0248(85)90058-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：169 / 172

页数：4

共 9 条

[1] HIGH-CONDUCTIVITY HETERO-EPITAXIAL ZNSE FILMS [J].

BESOMI, P ;

WESSELS, BW .

APPLIED PHYSICS LETTERS, 1980, 37 (10) :955-957

[2]

BLANCONNIER P, 1978, THIN SOLID FILMS, V55, P375, DOI 10.1016/0040-6090(78)90154-2

[3] GROWTH AND PROPERTIES OF UNDOPED N-TYPE ZNSE BY LOW-TEMPERATURE AND LOW-PRESSURE OMVPE [J].

FUJITA, S ;

MATSUDA, Y ;

SASAKI, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (06) :L360-L362

[4] GROWTH TEMPERATURE-DEPENDENCE OF CRYSTALLOGRAPHIC AND LUMINESCENT PROPERTIES OF ZNSXSE1-X (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1) BY LOW-PRESSURE MOVPE [J].

FUJITA, S ;

MATSUDA, Y ;

SASAKI, A .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :231-236

[5] NEAR-BAND-EDGE PHOTO-LUMINESCENCE IN ZNSE GROWN FROM INDIUM SOLUTION [J].

SHIRAKAWA, Y ;

KUKIMOTO, H .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) :2014-2019

[6] ORGANOMETALLIC VAPOR-DEPOSITION OF EPITAXIAL ZNSE FILMS ON GAAS SUBSTRATES [J].

STUTIUS, W .

APPLIED PHYSICS LETTERS, 1978, 33 (07) :656-658

[7] PHOTO-LUMINESCENCE AND HETEROJUNCTION PROPERTIES OF ZNSXSE1-X EPITAXIAL LAYERS ON GAAS AND GE GROWN BY ORGANOMETALLIC CVD [J].

STUTIUS, W .

JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (01) :95-109

[8]

STUTIUS W, 1981, J APPL PHYS, V53, P352

[9] THE ORGANO-METALLIC CHEMICAL VAPOR-DEPOSITION OF ZNS AND ZNSE AT ATMOSPHERIC-PRESSURE [J].

WRIGHT, PJ ;

COCKAYNE, B .

JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) :148-154

← 1 →