EPITAXIAL YBA2CU3OX THIN-FILMS WITH X = 6-7 BY OXYGEN IN-DIFFUSION FOLLOWING LASER DEPOSITION

被引：15

作者：

OHKUBO, M

KACHI, T

HIOKI, T

机构：

[1] Toyota Central Research and Development Labs., Aichi-gun, Aichi-ken, 480-11, Nagakute-cho

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 04期

关键词：

D O I：

10.1063/1.346609

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have synthesized (001)-epitaxially grown YBa2Cu 3Ox thin films with x=6-7 by laser deposition without post-annealing. A key point in the control of x is oxygen pressure during rapid cooling following the deposition. The relation between x and oxygen pressure almost agrees with a thermal equilibrium curve at 500 °C. This can be explained by the incorporation of oxygen during the cooling, considering that the oxygen in-diffusion is enhanced by the fast ab-plane diffusion in misoriented regions.

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页码：1782 / 1786

页数：5

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