HYDROGEN-INDUCED SURFACE ACCEPTORS ON GAAS(110) SURFACES AT LOW-TEMPERATURES

被引:19
作者
KAMPEN, TU
KOENDERS, L
SMIT, K
RUCKSCHLOSS, M
MONCH, W
机构
[1] Laboratorium für Festkörperphysik, Universität-GH-Duisburg, W-4100 Duisburg
关键词
D O I
10.1016/0039-6028(91)90285-Z
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The interaction of atomic hydrogen with clean, cleaved GaAs(110) surfaces was investigated at temperatures of 140 +/- 10 K. Ultraviolet photoemission spectroscopy, a Kelvin probe and electric-field-induced Raman spectroscopy were used to determine both the changes of surface band-bending and of the ionization energy as a function of exposure to atomic hydrogen. Up to the largest hydrogen exposure equivalent to 10(5) L of molecular hydrogen the ionization energy is decreased by 1.1 +/- 0.05 eV on samples doped n- and p-type. On n-samples the Fermi level eventually becomes pinned at 0.54 +/- 0.07 eV above the top of the valence band for exposures larger than 10(2) L. A depletion layer exhibiting a surface band-bending of 0.2 +/- 0.07 eV initially forms on samples doped p-type but was found to vanish gradually for exposures larger than 10 L. Thus atomic hydrogen generates surface states of acceptor character on GaAs(110) surfaces at low temperatures. The energy level of the hydrogen-induced surface acceptors is in reasonable agreement with theoretical predictions and it confirms a correlation between the energy levels of the adsorbate-induced surface acceptors and the atomic electron affinities of the adatoms. These results clearly show that with hydrogen no electronic passivation of GaAs interfaces can be achieved.
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页码:314 / 318
页数:5
相关论文
共 20 条
[1]   OXYGEN AND HYDROGEN ADSORPTION ON GAAS(110) [J].
BARTELS, F ;
SURKAMP, L ;
CLEMENS, HJ ;
MONCH, W .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :756-762
[2]   KINETICS STUDY OF INITIAL-STAGE BAND BENDING AT METAL GAAS(110) INTERFACES [J].
CAO, R ;
MIYANO, K ;
KENDELEWICZ, T ;
CHIN, KK ;
LINDAU, I ;
SPICER, WE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :998-1002
[3]  
CARDONA M, 1982, TOP APPL PHYS, V50, P19
[4]   THE INP(110)/SB INTERFACE - OHMIC BEHAVIOR AT LARGE SB COVERAGES [J].
ESSER, N ;
MUNDER, H ;
HUNERMANN, M ;
PLETSCHEN, W ;
RICHTER, W ;
ZAHN, DRT .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :1044-1047
[5]  
GAY G, 1971, LIGHT SCATTERING SOL, P33
[6]   MECHANISM OF STRONG RESONANT 1LO RAMAN-SCATTERING [J].
GOGOLIN, AA ;
RASHBA, EI .
SOLID STATE COMMUNICATIONS, 1976, 19 (12) :1177-1179
[7]   ELECTRONIC-PROPERTIES OF SULFUR ADSORBED ON CLEAVED GAAS-SURFACES [J].
KOENDERS, L ;
BLOMACHER, M ;
MONCH, W .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04) :1416-1420
[9]   THEORETICAL INVESTIGATION OF HYDROGEN CHEMISORPTION ON GA-CONTAINING III-V-COMPOUNDS [J].
MANGHI, F ;
BERTONI, CM ;
CALANDRA, C ;
MOLINARI, E .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :371-374
[10]   ELECTRONIC-PROPERTIES AND CHEMICAL INTERACTIONS AT III-V COMPOUND SEMICONDUCTOR SURFACES - GERMANIUM AND OXYGEN ON GAAS(110) AND INP(110) CLEAVED SURFACES [J].
MONCH, W .
APPLICATIONS OF SURFACE SCIENCE, 1985, 22-3 (MAY) :705-723