ELECTRONIC-PROPERTIES AND CHEMICAL INTERACTIONS AT III-V COMPOUND SEMICONDUCTOR SURFACES - GERMANIUM AND OXYGEN ON GAAS(110) AND INP(110) CLEAVED SURFACES

被引：31

作者：

MONCH, W

机构：

来源：

APPLICATIONS OF SURFACE SCIENCE | 1985年 / 22-3卷 / MAY期

关键词：

D O I：

10.1016/0378-5963(85)90204-1

中图分类号：

学科分类号：

摘要：

引用

页码：705 / 723

页数：19

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