INTERNAL PHOTOEMISSION MEASUREMENTS IN A METAL-A12O3-SI SYSTEM

被引：46

作者：

SZYDLO, N

POIRIER, R

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1971年 / 42卷 / 12期

关键词：

D O I：

10.1063/1.1659868

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4880 / &

共 8 条

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PICUS, GS .

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[5]

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[6] POTENTIAL BARRIER PARAMETERS IN THIN-FILM AL-AL2O3-METAL DIODES [J].

NELSON, OL ;

ANDERSON, DE .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (01) :77-&

[7] INTERPRETATION OF LOW-VOLTAGE PHOTOMEASUREMENTS IN METAL-INSULATOR-METAL FILMS [J].

SCHUERME.FL ;

CRAWFORD, JA .

APPLIED PHYSICS LETTERS, 1966, 9 (08) :317-&

[8] PHOTOCURRENTS THROUGH THIN FILMS OF AL2O3 [J].

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JOURNAL OF APPLIED PHYSICS, 1965, 36 (3P1) :796-&

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