STUDIES OF DIFFUSED BORON EMITTERS - SATURATION CURRENT, BANDGAP NARROWING, AND SURFACE RECOMBINATION VELOCITY

被引：88

作者：

KING, RR

SWANSON, RM

机构：

[1] SUNPOWER CORP,MT VIEW,CA 94043

[2] STANFORD UNIV,SOLID STATE ELECTR LAB,STANFORD,CA 94305

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 06期

关键词：

D O I：

10.1109/16.81632

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The emitter saturation current density J0 was measured on diffused boron emitters in silicon for the case in which the emitter surface is passivated by a thermal oxide and for the case in which Al/Si is deposited on the emitter surface. The oxide-passivated emitters have a surface recombination velocity s which is near its lowest technologically achievable value. In contrast, the emitters with Al/Si on the surface have surface recombination velocities which approach the maximum possible value of s. From the J0 measurements, the apparent band-gap narrowing as a function of boron doping was found. Using this bandgap narrowing data, the surface recombination velocity at the Si/SiO2 interface was extracted for surface boron concentrations from 3 x 10(17) to 3 x 10(19) cm-3.

引用

页码：1399 / 1409

页数：11

共 30 条

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