STUDY OF SIO2/SI INTERFACE STATES IN MOS DEVICES BY SURFACE-CHARGE SPECTROSCOPY - APPLICATION TO RAPID THERMAL NITRIDATION OF SILICON

被引：6

作者：

ERMOLIEFF, A ^{[1
]}

DELEONIBUS, S ^{[1
]}

MARTHON, S ^{[1
]}

BLANCHARD, B ^{[1
]}

PIAGUET, J ^{[1
]}

机构：

[1] CEN, DMEL, CEA, TECHNOL AVANCEES, LETI, F-38041 GRENOBLE, FRANCE

来源：

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 1994年 / 67卷 / 03期

关键词：

D O I：

10.1016/0368-2048(93)02042-K

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

Surface charge spectroscopy (SCS) is investigated by X-ray photoelectron spectroscopy (XPS) and the results are compared with C(V) and G(V) low frequency density of states data obtained on MOS capacitors, performed using a SILO/RTN (sealed interface local oxidation of silicon/rapid thermal nitridation) based isolation process. The surface density of states is found to be correlated to initial oxygen content at various nitridation temperatures. Good agreement is obtained between both methods and metallic contamination measurements by secondary ion mass spectroscopy (SIMS) for surface state density as low as 10(11) to 10(12) cm-2 eV-1.

引用

页码：409 / 416

页数：8

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