CHANNEL GLASS WAVE-GUIDE DETECTORS WITH GRAFTED GAAS FILM IN EMBEDDED CONFIGURATION

Embedded metal-semiconductor-metal photodectors have been fabricated by grafting a 250 nm thick GaAs layer within the core of glass channel waveguides. Using this new configuration, edge, rather than vertical, coupling is achieved resulting in a substantial increase in the absorption coefficient and providing a protective layer for the detector. Absorption coefficients of 37.8 cm-1 and responsivities of 0.06 A/W for 50-mu-m long detectors have been measured at lambda = 633 nm.