SCANNING TUNNELING MICROSCOPY AND SPECTROSCOPY OF SI/SIGE(001) SUPERLATTICES

被引：19

作者：

YU, ET ^{[1
]}

HALBOUT, JM ^{[1
]}

POWELL, AR ^{[1
]}

IYER, SS ^{[1
]}

机构：

[1] IBM CORP,DIV RES,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 26期

关键词：

D O I：

10.1063/1.107947

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cross-sectional scanning tunneling microscopy and spectroscopy were used to study a modulation-doped Si/Si0.76Ge0.24(001) superlattice. Contrast between the Si and Si0.76Ge0.24 layers has been observed in topographic images. Features such as band-edge discontinuities and band bending arising from doping have been detected in spectroscopic measurements at a series of points across the superlattice structure.

引用

页码：3166 / 3168

页数：3

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