ABSORPTION AND PHOTOCONDUCTIVITY SPECTRA OF IN-DOPED GE IN FAR-INFRARED REGION

被引：8

作者：

SUGAWARA, F

NAKAMURA, T

HIROSE, T

KOBAYASHI, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1971年 / 10卷 / 08期

关键词：

D O I：

10.1143/JJAP.10.1108

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1108 / +

页数：1

相关论文

共 4 条

[1] ELECTRICAL PROPERTIES OF GERMANIUM SEMICONDUCTORS AT LOW TEMPERATURES [J].

FRITZSCHE, H .

PHYSICAL REVIEW, 1955, 99 (02) :406-419

[2] THE GENERAL THEORY OF BOLOMETER PERFORMANCE [J].

JONES, RC .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1953, 43 (01) :1-14

[3] EXCITATION SPECTRA OF GROUP 3 IMPURITIES IN GERMANIUM [J].

JONES, RL ;

FISHER, P .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (07) :1125-&

[4] FAR-INFRARED ABSORPTION SPECTRA OF SB-DOPED GE AT LOW TEMPERATURE [J].

NISIDA, Y ;

HORII, K .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1969, 26 (02) :388-+