LOW-ENERGY D+ SCATTERING FROM CS AND CSCL ADSORBED ON THE SI(100)2 X-1 SURFACE

被引:24
作者
SOUDA, R
HAYAMI, W
AIZAWA, T
ISHIZAWA, Y
机构
[1] National Institute for Research in Inorganic Materials, Tsukuba, Ibaraki, 305
关键词
D O I
10.1016/0039-6028(93)90708-R
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
On the basis of neutralization and inelastic scattering of low-energy D+ ions, the bond nature of Cs and CsCl adsorbed On the Si(100)2 x 1 surface has been investigated. In a low-coverage regime (< 0.2 ML), Cs is adsorbed ionically on Si(100) and subsequent oxygen adsorption readily causes the ionic Cs-O bond. CsCl is dissociatively adsorbed on the surface in a low-coverage regime due to the preferential reaction of Cl with the Si dangling bond and the resultant Cs is ionically bonded to Si.
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页码:245 / 254
页数:10
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