LOW-ENERGY D+ SCATTERING FROM CS AND CSCL ADSORBED ON THE SI(100)2 X-1 SURFACE

被引：24

作者：

SOUDA, R

HAYAMI, W

AIZAWA, T

ISHIZAWA, Y

机构：

[1] National Institute for Research in Inorganic Materials, Tsukuba, Ibaraki, 305

来源：

SURFACE SCIENCE | 1993年 / 290卷 / 03期

关键词：

D O I：

10.1016/0039-6028(93)90708-R

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

On the basis of neutralization and inelastic scattering of low-energy D+ ions, the bond nature of Cs and CsCl adsorbed On the Si(100)2 x 1 surface has been investigated. In a low-coverage regime (< 0.2 ML), Cs is adsorbed ionically on Si(100) and subsequent oxygen adsorption readily causes the ionic Cs-O bond. CsCl is dissociatively adsorbed on the surface in a low-coverage regime due to the preferential reaction of Cl with the Si dangling bond and the resultant Cs is ionically bonded to Si.

引用

页码：245 / 254

页数：10

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